Low-oxygen Monocrystal ingot Puller

The unique oxygen content reduction solution of SCEC can effectively reduce the oxygen content in Mono-Si ingot by 40% and improve the efficiency of N-type 210 cells by 0.1%-0.2%

The Crystal Growth Furnace is a piece of flexible shaft pulling type crystal growth equipment, which, in an inert atmosphere below atmospheric pressure, uses a graphite resistance heater to melt the silicon materials loaded in the quartz crucible, and grows high-quality, dislocation-free mono-Si ingots using the Czochralski method.The Low Oxygen Content Crystal Growth Furnace, designed to meet the low-oxygen requirements in the manufacturing process of N-type cells, achieves the effects of reducing oxygen content, increasing minority carrier lifetime, improving crystallization rate, and boosting daily output through technical means such as argon purging, hot zone process simulation, and software control algorithms, thereby effectively enhancing the efficiency of N-type cells.